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DISCRETE SEMICONDUCTORS
DATA SHEET
PHN110 N-channel enhancement mode MOS transistor
Product specification Supersedes data of 1996 Jul 16 File under Discrete Semiconductors, SC13b 1997 Jun 17
Philips Semiconductors
Product specification
N-channel enhancement mode MOS transistor
FEATURES * High-speed switching * No secondary breakdown * Very low on-resistance. APPLICATIONS * Motor and actuator driver * Power management * Synchronized rectification.
1
handbook, halfpage
PHN110
DESCRIPTION N-channel enhancement mode MOS transistor in an 8-pin plastic SOT96-1 (SO8) package.
dddd 5
8
PINNING - SOT96-1 (SO8) PIN 1 2 3 4 5 6 7 8 SYMBOL n.c s s g d d d d DESCRIPTION not connected source source gate drain drain drain drain
4 n.c. s s g
MAM116
Fig.1 Simplified outline and symbol.
CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling.
QUICK REFERENCE DATA SYMBOL VDS VSD VGS VGSth ID RDSon Ptot PARAMETER drain-source voltage (DC) source-drain diode forward voltage gate-source voltage (DC) gate-source threshold voltage drain current (DC) drain-source on-state resistance total power dissipation ID = 1 mA; VDS = VGS Ts = 80 C ID = 2.2 A; VGS = 10 V Ts = 80 C IS = 1.25 A CONDITIONS - - - 1 - - - MIN. MAX. 30 1.2 20 2.8 4 0.1 2.8 V V V V A W UNIT
1997 Jun 17
2
Philips Semiconductors
Product specification
N-channel enhancement mode MOS transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS VGS ID IDM Ptot PARAMETER drain-source voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation Ts = 80 C; note 1 note 2 Ts = 80 C Tamb = 25 C; note 3 Tamb = 25 C; note 4 Tstg Tj IS ISM Notes 1. Ts is the temperature at the soldering point of the drain lead. 2. Pulse width and duty cycle limited by maximum junction temperature. 3. Value based on a printed-circuit board with a Rth a-tp (ambient to tie-point) of 27.5 K/W. 4. Value based on a printed-circuit board with a Rth a-tp (ambient to tie-point) of 90 K/W. storage temperature operating junction temperature Ts = 80 C note 2 CONDITIONS - - - - - - - -65 -65 - - MIN.
PHN110
MAX. 30 20 4 16 2.8 2.4 1.1 +150 +150 V V A A
UNIT
W W W C C
Source-drain diode source current (DC) peak pulsed source current 3.5 14 A A
MBG848
handbook, halfpage
6
102 handbook, halfpage ID (A) 10
(1)
MBG750
Ptot (W) 4
tp = 10 s 100 s
1 P 2 10-1 tp 0 0 50 100 150 Ts (oC) 200 10-2 10-1 T 1 10 t
1 ms
= T
tp DC
10 ms 100 ms
VDS (V)
102
= 0.01; TS = 80 C. (1) RDSon limitation.
Fig.2 Power derating curve.
Fig.3 SOAR.
1997 Jun 17
3
Philips Semiconductors
Product specification
N-channel enhancement mode MOS transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point VALUE 25
PHN110
UNIT K/W
102 handbook, full pagewidth Rth j-s (K/W)
MBG749
= 0.75 0.5 0.33 0.2 0.1 0.05
10
1 0.02 0.01 0 10-1 10-6
P
= T
tp
tp T 10-4 10-3 10-2 10-1
t
10-5
tp (s)
1
Fig.4 Transient thermal resistance from junction to soldering point as a function of pulse time; typical values.
1997 Jun 17
4
Philips Semiconductors
Product specification
N-channel enhancement mode MOS transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)DSS VGSth IDSS IGSS RDSon Ciss Coss Crss Qg Qgs Qgd td(on) tf ton td(off) tr toff VSD trr PARAMETER drain-source breakdown voltage gate-source threshold voltage drain-source leakage current gate leakage current drain-source on-state resistance input capacitance output capacitance reverse transfer capacitance total gate charge gate-source charge gate-drain charge CONDITIONS VGS = 0; ID = 10 A VGS = VDS ; ID = 1 mA VGS = 0; VDS = 24 V VGS = 20 V; VDS = 0 VGS = 4.5 V; ID = 1 A VGS = 10 V; ID = 2 A VGS = 0; VDS = 24 V; f = 1 MHz VGS = 0; VDS = 24 V; f = 1 MHz VGS = 0; VDS = 24 V; f = 1 MHz VGS = 10 V; VDD = 15 V; ID = 2 A VGS = 10 V; VDD = 15 V; ID = 2 A VGS = 10 V; VDD = 15 V; ID = 2 A VGS = 0 to 10 V; VDD = 15 V; ID = 1 A; RL = 15 ; Rgen = 6 VGS = 10 to 0 V; VDD = 15 V; ID = 1 A; RL = 15 ; Rgen = 6 MIN. 30 1 - - - - - - - - - - - - - - - - - - TYP. - - - - 0.11 0.08 250 140 50 10 1 2.5
PHN110
MAX. - 2.8 100 100 0.2 0.1 - - - 30 - - - - 16 - - 50
UNIT V V nA nA pF pF pF nC nC nC
Switching times (see Fig.11) turn-on delay time fall time turn-on switching time turn-off delay time rise time turn-off switching time 4.5 3.5 8 15 10 25 - 35 ns ns ns ns ns ns
Source-drain diode source-drain diode forward voltage reverse recovery time VGD = 0; IS = 1.25 A IS = 1.25 A; di/dt = -100 A/s 1.2 100 V ns
1997 Jun 17
5
Philips Semiconductors
Product specification
N-channel enhancement mode MOS transistor
PHN110
handbook, halfpage
10
MBE136
VGS (V)
handbook, halfpage
18
MBG748
ID (A)
8
16
VGS = 10 V 6 V 5.5 V 4.5 V
6
12 4V
4
8 3.5 V
2
4 3V 2.5 V
0 0 2 4 6 Q (nC) 8 g
0 0 2 4 6 8 10 VDS (V)
VDD = 15 V: ID = 2 A. Tj = 25 C.
Fig.5
Gate-source voltage as a function of total gate charge; typical values.
Fig.6 Output characteristics; typical values.
handbook, halfpage
16
MBG747
handbook, halfpage
16
MBG746
ID (A) 12
IS (A) 12
8
8
(1) (2) (3)
4
4
0 0 2 4 6V 8 GS (V)
0 0 VGD = 0. (1) Tj = 150 C. (2) Tj = 25 C. (3) Tj = -65 C. 0.4 0.8 VSD (V) 1.2
VDS = 10 V; Tj = 25 C.
Fig.8 Fig.7 Transfer characteristics; typical values.
Source current as a function of source-drain diode forward voltage; typical values.
1997 Jun 17
6
Philips Semiconductors
Product specification
N-channel enhancement mode MOS transistor
PHN110
103 handbook, halfpage
MBG846
MBG847
ID= 100 mA 500 mA 1A 2A 4A 5.4 A
handbook, halfpage
600
RDSon (m)
C (pF) 400
102 Ciss 200 Coss Crss 10 0 2 4 6 8 10 VGS (V) 0 0 8 16 VDS (V) 24
VDS ID x RDSon; Tj = 25 C.
VGS = 0; f = 1 MHz; Tj = 25 C.
Fig.9
Drain-source on-resistance as a function of gate-source voltage; typical values.
Fig.10 Capacitance as a function of drain-source voltage; typical values.
handbook, full pagewidth
VDD Vin RL Vout 0
90 %
10 %
90 % Vout 10 % 0 td(on) tf ton toff td(off) tr
MBH538
Vin
Fig.11 Switching time test circuit and input and output waveforms.
1997 Jun 17
7
Philips Semiconductors
Product specification
N-channel enhancement mode MOS transistor
MBG745
PHN110
handbook, halfpage
1.2
handbook, halfpage
1.8
MBG744
k 1.1
k 1.6
(1)
1.0
1.4
(2)
0.9
1.2
0.8
1.0
0.7
0.8
0.6 -75
-25
25
75
125 175 Tj (oC)
0.6 -75
-25
25
75
125 175 Tj (oC)
V GSth at T j k = ------------------------------------V GSth at 25C Typical VGSth at VDS = GS; ID = 1 mA.
R DSon at T j k = ---------------------------------------- Typical RDSon at: R DSon at 25 C (1) ID = 2 A; VGS = 10 V. (2) ID = 1 A; VGS = 4.5 V.
Fig.12 Temperature coefficient of gate-source threshold voltage; typical values.
Fig.13 Temperature coefficient of drain-source on-resistance; typical values.
1997 Jun 17
8
Philips Semiconductors
Product specification
N-channel enhancement mode MOS transistor
PACKAGE OUTLINE SO8: plastic small outline package; 8 leads; body width 3.9 mm
PHN110
SOT96-1
D
E
A X
c y HE vMA
Z 8 5
Q A2 A1 pin 1 index Lp 1 e bp 4 wM L detail X (A 3) A
0
2.5 scale
5 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches A max. 1.75 0.069 A1 0.25 0.10 A2 1.45 1.25 A3 0.25 0.01 bp 0.49 0.36 c 0.25 0.19 D (1) 5.0 4.8 0.20 0.19 E (2) 4.0 3.8 0.16 0.15 e 1.27 0.050 HE 6.2 5.8 L 1.05 Lp 1.0 0.4 Q 0.7 0.6 v 0.25 0.01 w 0.25 0.01 y 0.1 0.004 Z (1) 0.7 0.3 0.028 0.012
0.010 0.057 0.004 0.049
0.019 0.0100 0.014 0.0075
0.244 0.039 0.028 0.041 0.228 0.016 0.024
8 0o
o
Notes 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. 2. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT96-1 REFERENCES IEC 076E03S JEDEC MS-012AA EIAJ EUROPEAN PROJECTION
ISSUE DATE 95-02-04 97-05-22
1997 Jun 17
9
Philips Semiconductors
Product specification
N-channel enhancement mode MOS transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
PHN110
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1997 Jun 17
10
Philips Semiconductors
Product specification
N-channel enhancement mode MOS transistor
NOTES
PHN110
1997 Jun 17
11
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1997
Internet: http://www.semiconductors.philips.com
SCA54
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
137107/00/04/pp12
Date of release: 1997 Jun 17
Document order number:
9397 750 02385

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